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HIGH PRESSURE LOW TEMPERATURE CELL

In the early 1960 a demand for hydrostatic cells capable of operating at low temperatures arose.

Theory predicted the possibility to observe drastic changes of thermodynamic and kinetic phenomena in crystals due to pressure influence on electronic structure in metals and semiconductors.

By that time, the charge carrier spectra could be determined at normal pressure from the results of measurements of various quantum phenomena in perfect single crystals at low temperatures and, often, in strong magnetic fields.

In 1962-63, a high pressure cell suitable for such measurements under pressure was designed (E.S. Itskevich, Zh. Eksp.Teor. Fiz., 196222, vol.42, p.1173; Prib. Tekh. Eksp., 1963, #4, p.148). To hydrostatically pressurize single-crystal samples in a fluid medium, a piston-cylinder  assembly made of beryllium bronze filled with an oil-kerosene mixture was used.  After loading at room temperature the position of the piston was fixed, and the armed cell was slowly cooled.

The first measurements with the cell were made under pressure up to 0.8 GPa. After a number of modifications of the basic low temperature cell the hydrostatic pressure range was increased up to 3.0 GPa, the cell dimensions were reduced, high-strength nonmagnetic steel was used as a material for the cylinders beside beryllium bronze. All this provided the possibility to use the cells in studies of the quantum oscillations, the anisotropy of electric conductivity in strong magnetic fields, and hence to reconstruct the Fermi surface, to observe its topological transition - (State List of Invention, Certificate no.238, 1982, from IPPH E.S. Itskevich, A.N. Voronovskii)) and to discover a number of new effects in connection with the tunnel transport of charge carriers in semiconductors  and superconductors. Modifications of the basic cell for optical and thermal studies are also available and are now in use in many laboratories.

THE HYDROSTATIC HIGH PRESSURE CELL FOR GALVANOMAGNETIC AND THERMAL MEASUREMENTS AT LOW TEMPERATURES.

These cells developed  in the Institute for High Pressure Physics of the Russian Academy of Sciences provide possibility of electric, magnetoelectric, thermoelectric, tunneling and superconducting (including HTSC) measurements in the pressure range up to 3 GPa (430,000 psi) at temperatures from 1 to 400 K. This piston-cylinder type unit is made of non-magnetic materials and uses a variety of neutral liquids like benzene, pentane, kerosene, alcohol and so on as a pressure transmitting media.

The pressure is generated by loading the High Pressure Unit with a conventional laboratory press (up to 20 ton) and after fixation the pressure unit may be removed and placed in the experimental equipment such as cryostat, magnetic coil and so on. For example, to cool the High Pressure Unit down from liquid nitrogen to helium temperatures no more than 3 litre of liquid helium is needed.

  

  The cell  with  Inner cylinder (support) 

1–fixing nut, 2-inner cylinder (insert),3-piston,4-Bridgman   packing5-shaft,transmitting force from press,6-thrust plate, 7-specimen,  8-transmitting  medium, 9-stop,10-support  shell,11-stop packing.

 A.N. Voronovskii, E.S. Itskevich, V.A.Suhoparov, E.M.Dizhur, State Certificate no.920033,1980; E.S.Itskevich, L.M.Kaschirskaja, FTT, v.24, no.4, 1982.   

Three ready for sale options are available differing in the upper limit of pressure range.

Option

#1

#2

#3

Pressure range, Gpa

1.0

2.0

3.0

Outer diameter, mm

30

40

60

Inner diameter, mm

8

6

6

Working volume at Max pressure, ccm

1

0.35

0.35

Weight, kg

1.0

1.7

2.7

To provide the possibility of electrical measurements all the above options include a sample holder with 12 wire feed-trough, and this number is sufficient as a rule to connect the sample and the pressure gauge to the measuring circuitry.

 We are ready to meet any special requirements also. If the problem looks too challenging to you we can help you to solve it using all the experience of our scientific and engineering staff.

 The main referencies:

1. E.S.Itskevich, A.N.Voronovskii,  Change of Fermi Surface Topology of Cd under Pressure, JETP Lett. v4, ¹6,1966

 2. E.S.Itskevich, L.M.Fischer, Disappearance of Shubnikov- de Haas effect in  Bi-Sb Alloy under Pressure, JETP Lett. v6, ¹7, 1967

 3. E.S.Itskevich,.V.A.Suhoparov, Pressure Influence on effective electron mass in InSb, Sov. Phys. - Fiz.Tw.Tela,V.9, ¹1,1968

 4. N.V.Zavaritskii, E.S.Itskevich, A.N.VÏronovskii, Measurements of Lattice Vibrational Spectra and Electron-Phonon Interaction in Superconductors under Pressure., Sov. Phys. - JETP v60, ¹4,1971

 5. A.N.Voronovsky, E.M. Dizhur, E.S. Itskevich,  Variation of Phonon Energy in Ge under Pressure up to 3 GPa, Sov. Phys. - JETP, v.77,¹3,1979

 6. V.F.Kraidenov, E.S. Itskevich, Thermopower of Cd under Hydrostatic Pressure up to 3 GPa near electron-topological Transition., Sov. Phys.- Fiz.Tverd.Tela, v37,1995

 7. A.N. Voronovskii, I.E. Itskevich, L.M. Kashirskaya, V.D.Kulakovskii, B.K. Medvedev, V.G. Mokerov. Persistent photoconductivity in hydrostatically compressed, selectively doped n-AlGaAs/GaAs structures.  JETP Lett. 42 (10), 501-505, 1985. 

 8. E.M.Dizhur,A.N.Voronovsky,E.S.Itskevich,I.N.Kotel'nikov,A.Ya.Schulman, Oscillations on Tunneling Conductance of Schottky-Barrier n-GaAs/Au Junctions. - High Pressure Research,1992,v9 - v10, No.1-2, p.370-373

 9. E.M. Dizhur, E.S. Itskevich, L.M. Kashirskaya, A.N. Voronovsky, T. Malik, R.A. Stradling, W.T. Yuen, Galvanomagnetic measurements of the 2d electron-hole gas in gasb/inas/gasb quantum wells under pressures up to 2.5 GPa. -Physica Status Solidi, 198 (1), 1996, p.289

10. E.M.Dizhur, A.N.Voronovsky, The Evidence Of Weak Localization In 2deg From Studies Of Pressure Induced Semimetal-Semiconductor-Insulator Transitions In GaSb/InAs/GaSb Quantum Wells.  -Phisica Status Solidi, (b)211, 449(1999

 

Contact person: Dr. Valentin Ryzhov. E-mail: ryzhov@hppi.troitsk.ru

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